IXYS Type N-Channel MOSFET, 86 A, 300 V Enhancement, 4-Pin SOT-227 IXFN102N30P
- RS Stock No.:
- 193-464
- Distrelec Article No.:
- 302-53-358
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.318 49
(exc. VAT)
Kr.398 11
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 19. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | Kr. 318,49 |
| 2 - 4 | Kr. 302,59 |
| 5 + | Kr. 286,69 |
*price indicative
- RS Stock No.:
- 193-464
- Distrelec Article No.:
- 302-53-358
- Mfr. Part No.:
- IXFN102N30P
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 224nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 570W | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Width | 25.42 mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Distrelec Product Id | 30253358 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 300V | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 224nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 570W | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Width 25.42 mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Distrelec Product Id 30253358 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS HiperFET 86 A 4-Pin SOT-227 IXFN102N30P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N30P
- IXYS HiperFET 66 A 4-Pin SOT-227 IXFN80N50P
- IXYS HiperFET 53 A 4-Pin SOT-227 IXFN60N80P
- IXYS HiperFET 150 A 4-Pin SOT-227 IXFN180N15P
- IXYS HiperFET 61 A 4-Pin SOT-227 IXFN64N50P
- IXYS HiperFET 40 A 4-Pin SOT-227 IXFN48N60P
- IXYS HiperFET 115 A 4-Pin SOT-227 IXFN140N20P