IXYS Type N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P

Bulk discount available

Subtotal (1 unit)*

Kr.377 75 

(exc. VAT)

Kr.472 19 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1 unit(s) ready to ship
  • Plus 46 unit(s) shipping from 31. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1Kr. 377,75
2 - 4Kr. 370,20
5 +Kr. 358,87

*price indicative

Packaging Options:
RS Stock No.:
193-739
Distrelec Article No.:
302-53-363
Mfr. Part No.:
IXFN140N30P
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

700W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

185nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Length

38.2mm

Distrelec Product Id

30253363

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links