onsemi NXH Type P, Type N-Channel MOSFET, 192 A, 1200 V Enhancement, 44-Pin PIM44 NXH600B100H4Q2F2PG

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Subtotal (1 unit)*

Kr.2 667 58 

(exc. VAT)

Kr.3 334 48 

(inc. VAT)

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Units
Per unit
1 +Kr. 2 667,58

*price indicative

Packaging Options:
RS Stock No.:
277-057
Mfr. Part No.:
NXH600B100H4Q2F2PG
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

1200V

Series

NXH

Package Type

PIM44

Mount Type

Snap-in

Pin Count

44

Channel Mode

Enhancement

Maximum Power Dissipation Pd

511W

Typical Gate Charge Qg @ Vgs

766nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.55V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The ON Semiconductor Hybrid Three Channel Symmetric Boost Module features two 1000V, 200A IGBTs and two 1200V, 60A SiC diodes per channel, along with an NTC thermistor for temperature monitoring. The module utilizes trench with field stop technology for high efficiency, significantly reducing switching losses and system power dissipation. Its design provides high power density, making it suitable for demanding power applications that require optimal performance and thermal management.

Low inductive layout

Low package height

Pb free

Halide free and RoHS compliant

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