Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2535N5-G
- RS Stock No.:
- 598-063
- Mfr. Part No.:
- DN2535N5-G
- Brand:
- Microchip
Subtotal (1 box of 300 units)*
Kr.7 316 40
(exc. VAT)
Kr.9 145 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 02. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Box* |
|---|---|---|
| 300 + | Kr. 24,388 | Kr. 7 316,40 |
*price indicative
- RS Stock No.:
- 598-063
- Mfr. Part No.:
- DN2535N5-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 (D-PAK-3) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.29mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Length | 4.4mm | |
| Width | 3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 (D-PAK-3) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 2.29mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Length 4.4mm | ||
Width 3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip Low threshold depletion mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
- Microchip DN2535 Silicon N-Channel MOSFET Transistor 350 V Depletion, 3-Pin TO-92 DN2535N3-G
- Microchip DN2540 Silicon N-Channel MOSFET 400 V Depletion, 3-Pin TO-92 DN2540N3-G-P003
- Microchip N-Channel MOSFET 350 V Depletion, 3-Pin TO-92 DN2535N3-G
- Microchip DN3135 N-Channel MOSFET 350 V Depletion, 3-Pin SOT-89 DN3135N8-G
- Microchip DN3135 N-Channel MOSFET 350 V Depletion, 3-Pin SOT-23 DN3135K1-G
- Microchip N-Channel MOSFET 350 V Depletion, 4-Pin TO-243AA DN3535N8-G
- Microchip DN3765 Silicon N-Channel MOSFET 650 V Depletion, 3-Pin DPAK DN3765K4-G
- Microchip DN2470 Silicon N-Channel MOSFET 700 V Depletion, 3-Pin DPAK DN2470K4-G