Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND150N3-G-P003
- RS Stock No.:
- 599-150
- Mfr. Part No.:
- LND150N3-G-P003
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
Kr.19 078 00
(exc. VAT)
Kr.23 848 00
(inc. VAT)
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- Shipping from 17. mars 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | Kr. 9,539 | Kr. 19 078,00 |
*price indicative
- RS Stock No.:
- 599-150
- Mfr. Part No.:
- LND150N3-G-P003
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 125°C | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Length | 3.05mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -25°C | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 125°C | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Length 3.05mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source drain diode
High input impedance and low CISS
ESD gate protection
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