Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2530N8-G
- RS Stock No.:
- 598-778
- Mfr. Part No.:
- DN2530N8-G
- Brand:
- Microchip
Subtotal (1 reel of 2000 units)*
Kr.19 998 00
(exc. VAT)
Kr.24 998 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 23. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | Kr. 9,999 | Kr. 19 998,00 |
*price indicative
- RS Stock No.:
- 598-778
- Mfr. Part No.:
- DN2530N8-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 (D-PAK-3) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Height | 2.29mm | |
| Length | 4.4mm | |
| Width | 3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 (D-PAK-3) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Height 2.29mm | ||
Length 4.4mm | ||
Width 3 mm | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Related links
- Microchip DN2530 Silicon N-Channel MOSFET Transistor 300 V Depletion, 3-Pin TO-92 DN2530N3-G
- Microchip DN3765 Silicon N-Channel MOSFET 650 V Depletion, 3-Pin DPAK DN3765K4-G
- Microchip DN3545 Silicon N-Channel MOSFET 450 V Depletion, 3-Pin SOT-89 DN3545N8-G
- Infineon SN7002I N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 SN7002IXTSA1
- Microchip DN2450 Silicon N-Channel MOSFET 500 V Depletion, 3-Pin TO-243AA DN2450N8-G
- Microchip N-Channel MOSFET 300 V Depletion, 3-Pin TO-92 DN2530N3-G
- Toshiba Silicon N-Channel MOSFET 60 VLM(T
- Microchip DN2470 Silicon N-Channel MOSFET 700 V Depletion, 3-Pin DPAK DN2470K4-G