Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3545N8-G

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Subtotal (1 reel of 2000 units)*

Kr.22 038 00 

(exc. VAT)

Kr.27 548 00 

(inc. VAT)

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Units
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Per Reel*
2000 +Kr. 11,019Kr. 22 038,00

*price indicative

RS Stock No.:
598-869
Mfr. Part No.:
DN3545N8-G
Brand:
Microchip
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Brand

Microchip

Channel Type

N-Channel DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252 (D-PAK-3)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

2.29mm

Length

4.4mm

Standards/Approvals

RoHS, ISO/TS‑16949

Width

3 mm

Automotive Standard

No

The Microchip Depletion mode transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

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