Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND01K1-G
- RS Stock No.:
- 598-897
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Subtotal (1 reel of 3000 units)*
Kr.18 978 00
(exc. VAT)
Kr.23 724 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 09. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | Kr. 6,326 | Kr. 18 978,00 |
*price indicative
- RS Stock No.:
- 598-897
- Mfr. Part No.:
- LND01K1-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 9V | |
| Package Type | SOT-23-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Depletion Mode | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -25°C | |
| Maximum Operating Temperature | 125°C | |
| Width | 1.75 mm | |
| Length | 3.05mm | |
| Height | 1.3mm | |
| Standards/Approvals | ISO/TS‑16949, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 9V | ||
Package Type SOT-23-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Depletion Mode | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -25°C | ||
Maximum Operating Temperature 125°C | ||
Width 1.75 mm | ||
Length 3.05mm | ||
Height 1.3mm | ||
Standards/Approvals ISO/TS‑16949, RoHS | ||
Automotive Standard No | ||
The Microchip Depletion-Mode MOSFET is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Low on resistance
Low input capacitance
Fast switching speeds
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Related links
- Microchip N-Channel MOSFET 9 V Depletion, 5-Pin SOT-23 LND01K1-G
- STMicroelectronics SuperMESH Silicon N-Channel MOSFET 600 V, 4-Pin SOT-223 STN1NK60Z
- Toshiba Dual Silicon N-Channel MOSFET 60 VLF(T
- Microchip DN2530 Silicon N-Channel MOSFET 300 V Depletion, 3-Pin TO-243AA DN2530N8-G
- onsemi N-Channel MOSFET 60 V, 3-Pin SOT-23 2N7002K
- Nexperia N-Channel MOSFET 60 V215
- Nexperia N-Channel MOSFET 60 V215
- Diodes Inc P-Channel MOSFET 30 V, 3-Pin SOT-23 DMP32D4S-7