Vishay SIR5712DP Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

Kr.18 198 00 

(exc. VAT)

Kr.22 746 00 

(inc. VAT)

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3000 +Kr. 6,066Kr. 18 198,00

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RS Stock No.:
653-110
Mfr. Part No.:
SIR5712DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Package Type

PowerPAK

Series

SIR5712DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0555Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

40W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

5.15 mm

Standards/Approvals

No

Length

6.15mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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