Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3

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Kr. 6,98

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Kr. 8,72

(inc. VAT)

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1 - 24Kr. 6,98
25 - 99Kr. 4,69
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RS Stock No.:
736-345
Mfr. Part No.:
SI9945CDY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Dual N-Channel

Maximum Continuous Drain Current Id

7.9A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

SI9945CDY

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.032Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.3nC

Maximum Power Dissipation Pd

3.6W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.

TrenchFET technology delivers reduced switching losses

Optimised Qg, Qgd, and Qgs ratios enhance performance

100% tested for Rg and UIS ensures reliability

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