Vishay SI9945CDY Dual N-Channel MOSFET, 7.9 A, 60 V Enhancement, 8-Pin SO-8 SI9945CDY-T1-GE3
- RS Stock No.:
- 736-345
- Mfr. Part No.:
- SI9945CDY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
Kr. 6,98
(exc. VAT)
Kr. 8,72
(inc. VAT)
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- Shipping from 08 June 2027
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Tape(s) | Per Tape |
|---|---|
| 1 - 24 | Kr. 6,98 |
| 25 - 99 | Kr. 4,69 |
| 100 + | Kr. 2,52 |
*price indicative
- RS Stock No.:
- 736-345
- Mfr. Part No.:
- SI9945CDY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 7.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SI9945CDY | |
| Package Type | SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.032Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 3.6W | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 7.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SI9945CDY | ||
Package Type SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.032Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 3.6W | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed for efficient power management. It is Ideal for various applications including load switches and LCD TV inverter circuits.
TrenchFET technology delivers reduced switching losses
Optimised Qg, Qgd, and Qgs ratios enhance performance
100% tested for Rg and UIS ensures reliability