Vishay MXP120A N channel-Channel MOSFET, 36 A, 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A160SL-GE3
- RS Stock No.:
- 847-940
- Mfr. Part No.:
- MXP120A160SL-GE3
- Brand:
- Vishay
Get a bulk buy discount
Add 10 more to save Kr. 351,90
View bulk pricing optionsSubtotal (1 unit)*
Kr. 92,59
(exc. VAT)
Kr. 115,74
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 07 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | Kr. 92,59 | - |
| 10 - 49 | Kr. 57,40 | Kr. 351,90 |
| 50 - 99 | Kr. 34,79 | Kr. 2 890,00 |
| 100 + | Kr. 33,99 | Kr. 5 860,00 |
*price indicative
- RS Stock No.:
- 847-940
- Mfr. Part No.:
- MXP120A160SL-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247AD | |
| Series | MXP120A | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 109W | |
| Maximum Operating Temperature | 175°C | |
| Length | 23.6mm | |
| Height | 5.21mm | |
| Width | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247AD | ||
Series MXP120A | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 109W | ||
Maximum Operating Temperature 175°C | ||
Length 23.6mm | ||
Height 5.21mm | ||
Width 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel SiC MOSFET delivers high efficiency and Rapid performance, making it Ideal for demanding applications in power management and energy control systems.
Fast switching speed optimises overall system performance
Short circuit withstand time of 2.5 μs enhances reliability
Rated for a maximum drain-source voltage of 1200 V ensures robust operation
Continuous drain current rating of 18 A supports extensive operational requirements
Minimal on-state resistance measured at 160 mOhm reduces energy loss
Related links
- Vishay MXP120A N channel-Channel MOSFET 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A250SE-T1GE3
- Vishay MXP120A N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247AD 3L
- Vishay MXP120A N-Channel MOSFET 1.2 kV Enhancement, 3-Pin TO-247AD 3L MXP120A080FW-GE3
- IXYS HiperFET N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100
- STMicroelectronics SCTWA40N12G24AG N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4AG
- Infineon IMZC120 N-Channel MOSFET 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R026M2HXKSA1
- STMicroelectronics SCTWA40N12G24AG N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG