Microchip MSCSMC N-Channel MOSFET Modules, 236 A, 1.2 kV Enhancement Mode, 33-Pin Module MSCSMC120AM04TBZ2EG

Subtotal (1 unit)*

Kr. 1 361,42

(exc. VAT)

Kr. 1 701,78

(inc. VAT)

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1 +Kr. 1 361,42

*price indicative

RS Stock No.:
931-017
Mfr. Part No.:
MSCSMC120AM04TBZ2EG
Brand:
Microchip
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Brand

Microchip

Channel Type

N

Product Type

MOSFET Modules

Maximum Continuous Drain Current Id

236A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

Module

Series

MSCSMC

Mount Type

Direct

Pin Count

33

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement Mode

Typical Gate Charge Qg @ Vgs

726nC

Maximum Gate Source Voltage Vgs

21V

Maximum Power Dissipation Pd

604W

Forward Voltage Vf

4.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Width

62.8mm

Standards/Approvals

No

Height

16.4mm

Length

56.7mm

Automotive Standard

No

The Microchip Advanced silicon carbide power module delivers exceptional performance in high-efficiency applications, particularly in demanding environments requiring robust power management and thermal capabilities.

SiC technology ensures low switching and conduction losses

Integrated thermistor facilitates effective temperature monitoring

Low thermal resistance allows efficient heat dissipation

Ultra low weight and profile contribute to design flexibility

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