Vishay SiR692DP N-Channel MOSFET, 24.2 A, 250 V Enhancement, 8-Pin SO-8 SIR692DP-T1-RE3
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 138,65
(exc. VAT)
Kr. 173,30
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 30 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 27,73 | Kr. 138,65 |
| 50 - 120 | Kr. 23,59 | Kr. 117,95 |
| 125 - 245 | Kr. 20,50 | Kr. 102,50 |
| 250 - 495 | Kr. 16,886 | Kr. 84,43 |
| 500 + | Kr. 13,294 | Kr. 66,47 |
*price indicative
- RS Stock No.:
- 134-9731
- Mfr. Part No.:
- SIR692DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24.2A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SO-8 | |
| Series | SiR692DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Width | 5.26mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24.2A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SO-8 | ||
Series SiR692DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Width 5.26mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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