Infineon IRF9410 N-Channel MOSFET, 7 A, 30 V, 8-Pin SO-8 IRF9410TRPBF
- RS Stock No.:
- 162-3278
- Mfr. Part No.:
- IRF9410TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 162-3278
- Mfr. Part No.:
- IRF9410TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8 | |
| Series | IRF9410 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 5mm | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Forward Diode Voltage | 1V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8 | ||
Series IRF9410 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 5mm | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant with RoHS
Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power application. with these improvements, multiple devices can be used in an application with dramatically reduce board space. the package is designed for vapor phase, infra red, or wave soldering techniques.
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
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