Infineon IRF9410 N-Channel MOSFET, 7 A, 30 V, 8-Pin SO-8 IRF9410TRPBF

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Subtotal (1 reel of 4000 units)*

Kr. 6 176,00

(exc. VAT)

Kr. 7 720,00

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 1,544Kr. 6 176,00

*price indicative

RS Stock No.:
162-3278
Mfr. Part No.:
IRF9410TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Series

IRF9410

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

18 nC @ 10 V

Length

5mm

Width

4mm

Number of Elements per Chip

1

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Non Compliant with RoHS

Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power application. with these improvements, multiple devices can be used in an application with dramatically reduce board space. the package is designed for vapor phase, infra red, or wave soldering techniques.

Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature

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