Name: Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8
Brand: Infineon
SKU: 257-9304
Price: 8.77 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-8A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	SO-8
	Series	HEXFET
	Pin Count	8
	Maximum Drain Source Resistance Rds	32mΩ
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id -8A
	Maximum Drain Source Voltage Vds -30V
	Package Type SO-8
	Series HEXFET
	Pin Count 8
	Maximum Drain Source Resistance Rds 32mΩ
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7328TRPBF

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

Infineon HEXFET Type N-Channel MOSFET, -8 A, -30 V, 8-Pin SO-8

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