Infineon HEXFET Type N-Channel MOSFET, -6.7 A, -20 V, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.20 216 00 

(exc. VAT)

Kr.25 272 00 

(inc. VAT)

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  • 4 000 unit(s) shipping from 19. februar 2026
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Units
Per unit
Per Reel*
4000 +Kr. 5,054Kr. 20 216,00

*price indicative

RS Stock No.:
257-9309
Mfr. Part No.:
IRF7404TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

-6.7A

Maximum Drain Source Voltage Vds

-20V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

40mΩ

Forward Voltage Vf

-1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.3nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered


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