Name: Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8
Brand: Infineon
SKU: 257-9302
Price: 8.02 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-9A
	Maximum Drain Source Voltage Vds	20V
	Series	HEXFET
	Package Type	SO-8
	Pin Count	8
	Maximum Drain Source Resistance Rds	18mΩ
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	5mm
	Height	1.75mm
	Standards/Approvals	RoHS
	Width	4 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id -9A
	Maximum Drain Source Voltage Vds 20V
	Series HEXFET
	Package Type SO-8
	Pin Count 8
	Maximum Drain Source Resistance Rds 18mΩ
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 5mm
	Height 1.75mm
	Standards/Approvals RoHS
	Width 4 mm
	Automotive Standard No

Datasheet - IRF7324TRPBF

The Infineon IRF series is the -20V dual p channel HEXFET power mosfet in a SO 8 package.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Industry standard surface mount power package

Capable of being wave soldered

Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8

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