Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.20 872 00 

(exc. VAT)

Kr.26 088 00 

(inc. VAT)

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Per unit
Per Reel*
4000 +Kr. 5,218Kr. 20 872,00

*price indicative

RS Stock No.:
257-9330
Mfr. Part No.:
IRF9358TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Package Type

SO-8

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

23.8mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate drive voltage (called Logic level)

Capable of being driven at 2.5V gate drive voltage (called super logic level)

Reduced design complexity in high side configuration

Easier interface to microcontroller

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