Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.7 828 00 

(exc. VAT)

Kr.9 784 00 

(inc. VAT)

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Last RS stock
  • Final 4 000 unit(s), ready to ship
Units
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Per Reel*
4000 - 4000Kr. 1,957Kr. 7 828,00
8000 +Kr. 1,859Kr. 7 436,00

*price indicative

RS Stock No.:
257-9337
Mfr. Part No.:
IRF9393TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

32.5mΩ

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V p channel strong IRFET power mosfet in a SO 8 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount package

Silicon optimized for applications switching below 100 kHz


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