Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF
- RS Stock No.:
- 257-9331
- Mfr. Part No.:
- IRF9358TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.75 65
(exc. VAT)
Kr.94 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 15,13 | Kr. 75,65 |
| 50 - 120 | Kr. 13,018 | Kr. 65,09 |
| 125 - 245 | Kr. 12,104 | Kr. 60,52 |
| 250 - 495 | Kr. 9,862 | Kr. 49,31 |
| 500 + | Kr. 6,818 | Kr. 34,09 |
*price indicative
- RS Stock No.:
- 257-9331
- Mfr. Part No.:
- IRF9358TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -9.2A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -9.2A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.
Optimized for broadest availability from distribution partners
Optimized for 4.5V gate drive voltage (called Logic level)
Capable of being driven at 2.5V gate drive voltage (called super logic level)
Reduced design complexity in high side configuration
Easier interface to microcontroller
Related links
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8 IRF9393TRPBF
- Infineon HEXFET P-Channel MOSFET 30 V, 8-Pin SOIC IRF9393TRPBF
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8 IRF7328TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7862TRPBF