Infineon HEXFET Type N-Channel MOSFET, -9.2 A, -30 V, 8-Pin SO-8 IRF9358TRPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.75 65 

(exc. VAT)

Kr.94 55 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 705 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 15,13Kr. 75,65
50 - 120Kr. 13,018Kr. 65,09
125 - 245Kr. 12,104Kr. 60,52
250 - 495Kr. 9,862Kr. 49,31
500 +Kr. 6,818Kr. 34,09

*price indicative

Packaging Options:
RS Stock No.:
257-9331
Mfr. Part No.:
IRF9358TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-9.2A

Maximum Drain Source Voltage Vds

-30V

Series

HEXFET

Package Type

SO-8

Pin Count

8

Maximum Drain Source Resistance Rds

23.8mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the -30V dual p channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Optimized for 4.5V gate drive voltage (called Logic level)

Capable of being driven at 2.5V gate drive voltage (called super logic level)

Reduced design complexity in high side configuration

Easier interface to microcontroller

Related links