Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

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Subtotal (1 reel of 4000 units)*

Kr.24 716 00 

(exc. VAT)

Kr.30 896 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 6,179Kr. 24 716,00

*price indicative

RS Stock No.:
257-9319
Mfr. Part No.:
IRF7820TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

200V

Package Type

SO-8

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

78mΩ

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

29nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

330mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered


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