Nexperia BSH111BK Type N-Channel MOSFET, 335 mA, 55 V Enhancement, 3-Pin SOT-23 BSH111BKR

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Subtotal (1 pack of 100 units)*

Kr.62 90 

(exc. VAT)

Kr.78 60 

(inc. VAT)

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Units
Per unit
Per Pack*
100 +Kr. 0,629Kr. 62,90

*price indicative

Packaging Options:
RS Stock No.:
170-5339
Mfr. Part No.:
BSH111BKR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

335mA

Maximum Drain Source Voltage Vds

55V

Series

BSH111BK

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.1Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.45W

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

150°C

Width

1.4 mm

Length

3mm

Height

1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 3 kV HBM

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

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