Vishay TrenchFET N-Channel MOSFET, 335 A, 25 V Enhancement, 8-Pin SO-8 SIRA20BDP-T1-GE3
- RS Stock No.:
- 228-2916
- Mfr. Part No.:
- SIRA20BDP-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 156,61
(exc. VAT)
Kr. 195,76
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 31,322 | Kr. 156,61 |
| 50 - 120 | Kr. 28,234 | Kr. 141,17 |
| 125 - 245 | Kr. 21,964 | Kr. 109,82 |
| 250 - 495 | Kr. 19,47 | Kr. 97,35 |
| 500 + | Kr. 17,87 | Kr. 89,35 |
*price indicative
- RS Stock No.:
- 228-2916
- Mfr. Part No.:
- SIRA20BDP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 335A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.58mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 335A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.58mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 25 V MOSFET.
100 % Rg and UIS tested
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