Infineon OptiMOS Type N-Channel MOSFET, 540 mA, 55 V Enhancement, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS Stock No.:
- 178-7474
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
Kr.1 698 00
(exc. VAT)
Kr.2 124 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 9 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | Kr. 0,566 | Kr. 1 698,00 |
| 6000 + | Kr. 0,538 | Kr. 1 614,00 |
*price indicative
- RS Stock No.:
- 178-7474
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 825mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 825mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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