Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC

Subtotal (1 reel of 2500 units)*

Kr.20 077 50 

(exc. VAT)

Kr.25 097 50 

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +Kr. 8,031Kr. 20 077,50

*price indicative

RS Stock No.:
170-8297
Mfr. Part No.:
SQ4920EY-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

0.75V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Power Dissipation Pd

4.4W

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

1.5mm

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Dual N-Channel MOSFET, Vishay Semiconductor


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