Vishay Isolated TrenchFET 2 Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC SQ4920EY-T1_GE3
- RS Stock No.:
- 787-9462
- Mfr. Part No.:
- SQ4920EY-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 5 units)*
Kr.110 97
(exc. VAT)
Kr.138 71
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. mai 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 45 | Kr. 22,194 | Kr. 110,97 |
| 50 - 120 | Kr. 20,89 | Kr. 104,45 |
| 125 - 245 | Kr. 18,83 | Kr. 94,15 |
| 250 - 495 | Kr. 17,754 | Kr. 88,77 |
| 500 + | Kr. 16,634 | Kr. 83,17 |
*price indicative
- RS Stock No.:
- 787-9462
- Mfr. Part No.:
- SQ4920EY-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19.7nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 4.4W | |
| Forward Voltage Vf | 0.75V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 175°C | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19.7nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 4.4W | ||
Forward Voltage Vf 0.75V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 175°C | ||
Width 4 mm | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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