onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C

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Subtotal (1 pack of 10 units)*

Kr.180 29 

(exc. VAT)

Kr.225 36 

(inc. VAT)

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Units
Per unit
Per Pack*
10 +Kr. 18,029Kr. 180,29

*price indicative

Packaging Options:
RS Stock No.:
178-4409
Mfr. Part No.:
FDMS4D0N12C
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

120V

Series

FDMS

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

106W

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Width

6 mm

Height

1.05mm

Automotive Standard

No

COO (Country of Origin):
PH
This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A

Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

Applications:

This product is general usage and suitable for many different applications.

End Products:

AC-DC and DC-DC Power Supplies

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