onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN FDMS4D5N08LC

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Subtotal (1 pack of 10 units)*

Kr.154 21 

(exc. VAT)

Kr.192 76 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90Kr. 15,421Kr. 154,21
100 - 240Kr. 13,293Kr. 132,93
250 +Kr. 11,818Kr. 118,18

*price indicative

Packaging Options:
RS Stock No.:
195-2499
Mfr. Part No.:
FDMS4D5N08LC
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

FDMS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

113.6W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.85mm

Height

1.05mm

Width

5 mm

Automotive Standard

No

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A

Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

Logic Level drive Capable

Application

This product is general usage and suitable for many different applications.

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