onsemi FDMS Type N-Channel MOSFET, 116 A, 80 V Enhancement, 8-Pin PQFN

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Subtotal (1 reel of 3000 units)*

Kr.36 408 00 

(exc. VAT)

Kr.45 510 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 12,136Kr. 36 408,00

*price indicative

RS Stock No.:
195-2498
Mfr. Part No.:
FDMS4D5N08LC
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

80V

Package Type

PQFN

Series

FDMS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

113.6W

Maximum Operating Temperature

150°C

Length

5.85mm

Height

1.05mm

Width

5 mm

Standards/Approvals

No

Automotive Standard

No

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with soft body diode.

Shielded Gate MOSFET Technology

Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 37 A

Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 29 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

Logic Level drive Capable

Application

This product is general usage and suitable for many different applications.

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