Vishay SiS126DN Type N-Channel MOSFET, 45.1 A, 80 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.12 726 00 

(exc. VAT)

Kr.15 906 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 4,242Kr. 12 726,00

*price indicative

RS Stock No.:
188-4886
Mfr. Part No.:
SIS126DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

45.1A

Maximum Drain Source Voltage Vds

80V

Series

SiS126DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21.1nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

3.15 mm

Standards/Approvals

No

Length

3.15mm

Height

1.07mm

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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