Vishay SiSHA10DN N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3

Subtotal (1 reel of 3000 units)*

Kr. 17 130,00

(exc. VAT)

Kr. 21 420,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 5,71Kr. 17 130,00

*price indicative

RS Stock No.:
188-4897
Mfr. Part No.:
SISHA10DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

SiSHA10DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

-16V, +20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

39W

Maximum Operating Temperature

150°C

Length

3.3mm

Height

930μm

Standards/Approvals

No

Width

3.3mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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