Vishay SiSS30LDN Type N-Channel MOSFET, 55.5 A, 80 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.17 433 00 

(exc. VAT)

Kr.21 792 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 5,811Kr. 17 433,00

*price indicative

RS Stock No.:
188-4902
Mfr. Part No.:
SISS30LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55.5A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212

Series

SiSS30LDN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

32.5nC

Maximum Power Dissipation Pd

57W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.3mm

Height

0.78mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

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