Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 850 mA, 20 V Enhancement, 6-Pin SOT-363

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Subtotal (1 reel of 3000 units)*

Kr.4 539 00 

(exc. VAT)

Kr.5 673 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 1,513Kr. 4 539,00

*price indicative

RS Stock No.:
188-4911
Mfr. Part No.:
SQ1922AEEH-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

850mA

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

530mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

0.9nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

1.5W

Forward Voltage Vf

0.8V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Width

1.35 mm

Length

2.2mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET.

TrenchFET® power MOSFET

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