Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 30 A, 40 V Enhancement, 4-Pin SO-8 SQJ912DEP-T1_GE3
- RS Stock No.:
- 210-5049
- Mfr. Part No.:
- SQJ912DEP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.104 45
(exc. VAT)
Kr.130 56
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
- Plus 3 000 left, shipping from 09. februar 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 10,445 | Kr. 104,45 |
| 100 - 240 | Kr. 9,907 | Kr. 99,07 |
| 250 - 490 | Kr. 7,539 | Kr. 75,39 |
| 500 - 990 | Kr. 6,784 | Kr. 67,84 |
| 1000 + | Kr. 5,754 | Kr. 57,54 |
*price indicative
- RS Stock No.:
- 210-5049
- Mfr. Part No.:
- SQJ912DEP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 27W | |
| Forward Voltage Vf | 0.79V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Height | 1.07mm | |
| Width | 4.37 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 27W | ||
Forward Voltage Vf 0.79V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Height 1.07mm | ||
Width 4.37 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET has PowerPAK SO-8L package type.
TrenchFET® power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Related links
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ208EP-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363 SQ1922AEEH-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 Type N 30 A 8-Pin SO-8