Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 219,65
(exc. VAT)
Kr. 274,55
(inc. VAT)
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In Stock
- Plus 40 unit(s) shipping from 17 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 43,93 | Kr. 219,65 |
| 25 - 45 | Kr. 37,342 | Kr. 186,71 |
| 50 - 120 | Kr. 35,144 | Kr. 175,72 |
| 125 - 245 | Kr. 32,984 | Kr. 164,92 |
| 250 + | Kr. 30,75 | Kr. 153,75 |
*price indicative
- RS Stock No.:
- 188-5065
- Mfr. Part No.:
- SQUN702E-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TrenchFET | |
| Package Type | Triple Die | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.79V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Common Drain | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 3 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TrenchFET | ||
Package Type Triple Die | ||
Mount Type Surface | ||
Pin Count 10 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.79V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Common Drain | ||
Standards/Approvals No | ||
Number of Elements per Chip 3 | ||
Automotive Standard AEC-Q101 | ||
Vishay TrenchFET Series MOSFET, 200V Drain Source Voltage, 30A Continuous Drain Current - SQUN702E-T1_GE3
This MOSFET is a surface-mount transistor device designed for power switching in demanding environments. It employs a triple-die topology in a common-drain configuration to handle elevated voltages and currents while supporting both P-channel and N-channel enhancement modes for flexible circuit integration.
Features and Benefits:
• 200V drain rating enables high-voltage switching capability
• 30A continuous drain current supports heavy load handling
• 60W dissipation permits sustained power delivery
• 20V gate tolerance allows robust gate-drive margin
• 23 nC typical gate charge yields predictable switching energy
• +175 °C maximum operation suits high-temperature use cases
• 30A continuous drain current supports heavy load handling
• 60W dissipation permits sustained power delivery
• 20V gate tolerance allows robust gate-drive margin
• 23 nC typical gate charge yields predictable switching energy
• +175 °C maximum operation suits high-temperature use cases
Applications
• Suitable for automotive power distribution modules
• Used for high-voltage DC-DC conversion stages
• Ideal for motor driver half-bridge assemblies
• Can be used for compact surface-mount power supplies
• Used with synchronous rectification circuits for efficiency
• Used for high-voltage DC-DC conversion stages
• Ideal for motor driver half-bridge assemblies
• Can be used for compact surface-mount power supplies
• Used with synchronous rectification circuits for efficiency
What pin configuration does it use for PCB layout?
The device uses a 10-pin package in a common-drain arrangement, allowing specific routing of source and gate connections while keeping the drain common across the triple-die structure.
How does the intrinsic diode perform during conduction?
The body diode exhibits a forward voltage of 0.79V, affecting conduction losses and thermal loading during reverse-recovery events.
Are both channel polarities available on the same component?
The device contains both P-channel and N-channel elements implemented as enhancement-mode transistors to accommodate complementary switching topologies.
What environmental temperature range can it tolerate during operation?
It is specified for operation from -55 °C up to +175 °C, permitting use across a wide thermal span in harsh conditions.
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