Vishay SiJ128LDP Type N-Channel MOSFET, 25.5 A, 80 V Enhancement, 4-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.22 227 00 

(exc. VAT)

Kr.27 783 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 7,409Kr. 22 227,00

*price indicative

RS Stock No.:
204-7216
Mfr. Part No.:
SiJ128LDP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25.5A

Maximum Drain Source Voltage Vds

80V

Series

SiJ128LDP

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

15.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

22.3W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

6.25mm

Width

1.14 mm

Standards/Approvals

No

Length

5.25mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low Qg and Qoss reduce power loss and improve efficiency. It has a very low Qg and Qoss reduce power loss and improve efficiency.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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