Vishay SiHF068N60EF Type N-Channel MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220FP SIHF068N60EF-GE3
- RS Stock No.:
- 204-7249
- Mfr. Part No.:
- SIHF068N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.210 72
(exc. VAT)
Kr.263 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 5 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 42,144 | Kr. 210,72 |
| 25 - 45 | Kr. 37,912 | Kr. 189,56 |
| 50 - 120 | Kr. 34,686 | Kr. 173,43 |
| 125 - 245 | Kr. 33,748 | Kr. 168,74 |
| 250 + | Kr. 32,924 | Kr. 164,62 |
*price indicative
- RS Stock No.:
- 204-7249
- Mfr. Part No.:
- SIHF068N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220FP | |
| Series | SiHF068N60EF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 39W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 10 mm | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220FP | ||
Series SiHF068N60EF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 39W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 10 mm | ||
Height 4.6mm | ||
Length 28.6mm | ||
Automotive Standard No | ||
The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.
Avalanche energy rated (UIS)
Low figure-of-merit (FOM) Ron x Qg
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