Vishay SiDR680ADP Type N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8 SIDR680ADP-T1-RE3

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Subtotal (1 pack of 10 units)*

Kr.243 21 

(exc. VAT)

Kr.304 01 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 24,321Kr. 243,21
50 - 90Kr. 19,437Kr. 194,37
100 - 240Kr. 17,343Kr. 173,43
250 - 490Kr. 16,897Kr. 168,97
500 +Kr. 16,462Kr. 164,62

*price indicative

Packaging Options:
RS Stock No.:
204-7258
Mfr. Part No.:
SIDR680ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiDR680ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.88mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

150°C

Length

5.9mm

Standards/Approvals

No

Width

4.9 mm

Height

0.51mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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