Vishay SiDR680ADP Type N-Channel MOSFET, 137 A, 80 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.44 115 00 

(exc. VAT)

Kr.55 143 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 14,705Kr. 44 115,00

*price indicative

RS Stock No.:
204-7257
Mfr. Part No.:
SIDR680ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiDR680ADP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.88mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

55nC

Maximum Operating Temperature

150°C

Width

4.9 mm

Length

5.9mm

Standards/Approvals

No

Height

0.51mm

Automotive Standard

No

The Vishay N-Channel 80 V (D-S) MOSFET has a very low RDS - Qg figure-of-merit (FOM) and is tuned for the lowest RDS - Qoss FOM.

100 % Rg and UIS tested

TrenchFET Gen IV power MOSFET

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