Vishay SiR180ADP Type N-Channel MOSFET, 137 A, 60 V Enhancement, 8-Pin SO-8 SiR180ADP-T1-RE3

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Subtotal (1 pack of 5 units)*

Kr.84 43 

(exc. VAT)

Kr.105 54 

(inc. VAT)

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Being discontinued
  • Final 1 125 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45Kr. 16,886Kr. 84,43
50 - 120Kr. 15,216Kr. 76,08
125 - 245Kr. 12,172Kr. 60,86
250 - 495Kr. 10,318Kr. 51,59
500 +Kr. 9,746Kr. 48,73

*price indicative

Packaging Options:
RS Stock No.:
210-5001
Mfr. Part No.:
SiR180ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

137A

Maximum Drain Source Voltage Vds

60V

Series

SiR180ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.8mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

46.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

83.3W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

5.26 mm

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET has PowerPAK SO-8 package type.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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