Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1
- RS Stock No.:
- 214-8977
- Mfr. Part No.:
- BSC0910NDIATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.183 82
(exc. VAT)
Kr.229 78
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 960 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 18,382 | Kr. 183,82 |
| 50 - 90 | Kr. 17,457 | Kr. 174,57 |
| 100 - 240 | Kr. 17,103 | Kr. 171,03 |
| 250 - 490 | Kr. 15,993 | Kr. 159,93 |
| 500 + | Kr. 14,895 | Kr. 148,95 |
*price indicative
- RS Stock No.:
- 214-8977
- Mfr. Part No.:
- BSC0910NDIATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.87V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Height | 1.1mm | |
| Length | 5mm | |
| Width | 6 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.87V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Height 1.1mm | ||
Length 5mm | ||
Width 6 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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