Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO

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Subtotal (1 reel of 2500 units)*

Kr.26 967 50 

(exc. VAT)

Kr.33 710 00 

(inc. VAT)

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Temporarily out of stock
  • 2 500 unit(s) shipping from 07. januar 2027
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Units
Per unit
Per Reel*
2500 +Kr. 10,787Kr. 26 967,50

*price indicative

RS Stock No.:
222-4623
Mfr. Part No.:
BSO604NS2XUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

55V

Series

OptiMOS

Package Type

DSO

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.94 mm

Length

4.9mm

Height

1.47mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

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