Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IRFR540ZTRPBF

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Subtotal (1 pack of 20 units)*

Kr.231 32 

(exc. VAT)

Kr.289 16 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
20 - 80Kr. 11,566Kr. 231,32
100 - 180Kr. 10,988Kr. 219,76
200 - 480Kr. 10,525Kr. 210,50
500 - 980Kr. 10,062Kr. 201,24
1000 +Kr. 9,37Kr. 187,40

*price indicative

Packaging Options:
RS Stock No.:
215-2599
Mfr. Part No.:
IRFR540ZTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free and Halogen-Free

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