Infineon HEXFET Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 AUIRFR540Z

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Subtotal (1 pack of 10 units)*

Kr.237 43 

(exc. VAT)

Kr.296 79 

(inc. VAT)

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Per Pack*
10 - 40Kr. 23,743Kr. 237,43
50 - 90Kr. 22,548Kr. 225,48
100 - 240Kr. 20,306Kr. 203,06
250 +Kr. 20,203Kr. 202,03

*price indicative

Packaging Options:
RS Stock No.:
214-8953
Mfr. Part No.:
AUIRFR540Z
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

28.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

91W

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.22mm

Width

6.73 mm

Height

2.39mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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