Infineon OptiMOS-T Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-252 IPD35N10S3L26ATMA1

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 15 units)*

Kr.158 475 

(exc. VAT)

Kr.198 09 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 11 505 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
15 - 60Kr. 10,565Kr. 158,48
75 - 135Kr. 10,037Kr. 150,56
150 - 360Kr. 9,617Kr. 144,26
375 - 735Kr. 9,19Kr. 137,85
750 +Kr. 8,565Kr. 128,48

*price indicative

Packaging Options:
RS Stock No.:
218-3043
Mfr. Part No.:
IPD35N10S3L26ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS-T

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

71W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T series N-channel automotive MOSFET integrated with DPAK (TO-252) type package. It has low switching and conduction power losses.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

Related links