Infineon CoolMOS Type N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.626 90 

(exc. VAT)

Kr.783 60 

(inc. VAT)

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In Stock
  • Plus 950 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
50 - 50Kr. 12,538Kr. 626,90
100 - 200Kr. 9,53Kr. 476,50
250 - 450Kr. 8,903Kr. 445,15
500 - 1200Kr. 8,276Kr. 413,80
1250 +Kr. 7,649Kr. 382,45

*price indicative

RS Stock No.:
217-2496
Mfr. Part No.:
IPAN60R650CEXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.9A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

P

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

82W

Typical Gate Charge Qg @ Vgs

20.5nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

16.1mm

Standards/Approvals

No

Width

4.8 mm

Height

29.87mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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