Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220
- RS Stock No.:
- 214-4353
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.504 50
(exc. VAT)
Kr.630 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 11. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 10,09 | Kr. 504,50 |
| 100 - 200 | Kr. 8,072 | Kr. 403,60 |
| 250 - 450 | Kr. 7,669 | Kr. 383,45 |
| 500 - 950 | Kr. 7,264 | Kr. 363,20 |
| 1000 + | Kr. 6,962 | Kr. 348,10 |
*price indicative
- RS Stock No.:
- 214-4353
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 31W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 16.15 mm | |
| Length | 10.68mm | |
| Standards/Approvals | No | |
| Height | 4.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 31W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 16.15 mm | ||
Length 10.68mm | ||
Standards/Approvals No | ||
Height 4.85mm | ||
Automotive Standard No | ||
This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
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