Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2500 units)*

Kr.14 070 00 

(exc. VAT)

Kr.17 587 50 

(inc. VAT)

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  • Plus 2 500 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
2500 +Kr. 5,628Kr. 14 070,00

*price indicative

RS Stock No.:
214-4395
Mfr. Part No.:
IPD80R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

23nC

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.65mm

Standards/Approvals

No

Height

2.35mm

Width

6.42 mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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