Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- RS Stock No.:
- 214-4355
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 15 units)*
Kr.165 54
(exc. VAT)
Kr.206 925
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 13. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 60 | Kr. 11,036 | Kr. 165,54 |
| 75 - 135 | Kr. 10,487 | Kr. 157,31 |
| 150 - 360 | Kr. 10,265 | Kr. 153,98 |
| 375 - 735 | Kr. 9,602 | Kr. 144,03 |
| 750 + | Kr. 8,939 | Kr. 134,09 |
*price indicative
- RS Stock No.:
- 214-4355
- Mfr. Part No.:
- IPA80R1K4CEXKSA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | CoolMOS CE | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 31W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.68mm | |
| Height | 4.85mm | |
| Width | 16.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series CoolMOS CE | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 31W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.68mm | ||
Height 4.85mm | ||
Width 16.15 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon CoolMOSE CE MOSFET uses revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
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- Infineon CoolMOS CE Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252
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- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220