Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1

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Subtotal (1 pack of 15 units)*

Kr.131 325 

(exc. VAT)

Kr.164 16 

(inc. VAT)

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Per Pack*
15 +Kr. 8,755Kr. 131,33

*price indicative

Packaging Options:
RS Stock No.:
214-4396
Mfr. Part No.:
IPD80R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

23nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

150°C

Width

6.42 mm

Height

2.35mm

Standards/Approvals

No

Length

6.65mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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