Infineon CoolMOS CE N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Brand:
- Infineon
Subtotal (1 pack of 15 units)*
Kr. 131,33
(exc. VAT)
Kr. 164,16
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 4 965 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 + | Kr. 8,755 | Kr. 131,33 |
*price indicative
- RS Stock No.:
- 214-4396
- Mfr. Part No.:
- IPD80R1K4CEATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | CoolMOS CE | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 63W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.42mm | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series CoolMOS CE | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 63W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 6.42mm | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Length 6.65mm | ||
Automotive Standard No | ||
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.
It is RoHS compliant
Related links
- Infineon CoolMOS CE N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1
- Infineon CoolMOS CE N-Channel MOSFET 800 V P, 3-Pin TO-220
- Infineon CoolMOS CE N-Channel MOSFET 800 V P, 3-Pin TO-220 IPA80R1K4CEXKSA2
- Infineon CoolMOS CE N-Channel MOSFET 800 V Enhancement, 3-Pin TO-252 IPD80R1K0CEATMA1
- Infineon CoolMOS CE N-Channel MOSFET 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1
- Infineon CoolMOS CE N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD60R1K0CEAUMA1
- Infineon CoolMOS CE N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1
- Infineon CoolMOS CE N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252 IPD50R650CEAUMA1